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1. product profile 1.1 general description 100 w ldmos packaged asymmetrical doherty power transistor for base station applications at frequencies from 2496 mhz to 2690 mhz. [1] test signal: 3gpp test model 1; 1 to 64 dp ch; par = 7.2 db at 0.01 % probability on ccdf. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low thermal resistance providing excellent thermal stability ? decoupling leads to enable improved video bandwidth ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifier for lte base stations and multi carrier applications in the 2496 mhz to 2690 mhz frequency range blc8g27ls-100av power ldmos transistor rev. 2 ? 29 september 2014 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in the doherty demo board. test signal f v ds p l(av) g p ? d acpr (mhz) (v) (w) (db) (%) (dbc) 1-carrier w-cdma 2520 to 2620 28 18 15.5 45 ? 30 [1]
blc8g27ls-100av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 29 september 2014 2 of 14 nxp semiconductors blc8g27ls-100av power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator. 5. thermal characteristics table 2. pinning pin description simplified outline graphic symbol 1 drain1 (main) 2 drain2 (peak) 3 gate1 (main) 4 gate2 (peak) 5 video decoupling (main) 6 video decoupling (peak) 7source [1] ddd table 3. ordering information type number package name description version blc8g27ls-100av - air cavity plastic earless flanged package; 6 leads sot1275-1 table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-case) thermal resistance from junction to case t case =80 ?c; v ds = 28 v; i dq = 250 ma p l = 18 w 0.314 k/w p l = 65 w 0.289 k/w
blc8g27ls-100av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 29 september 2014 3 of 14 nxp semiconductors blc8g27ls-100av power ldmos transistor 6. characteristics table 6. dc characteristics t j = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit main device v (br)dss drain-source breakdown voltage v gs =0v; i d =0.51ma 65--v v gs(th) gate-source threshold voltage v ds =10 v; i d =51ma 1.5 1.9 2.3 v v gsq gate-source quiescent voltage v ds =28 v; i d = 306 ma 1.7 2.0 2.5 v i dss drain leakage current v gs =0v; v ds =28v - - 1.4 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -9.6- a i gss gate leakage current v gs =11v; v ds = 0 v - - 140 na g fs forward transconductance v ds =10v; i d = 51 ma - 0.46 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =1.785a - 294 451 m ? peak device v (br)dss drain-source breakdown voltage v gs =0v; i d =0.72ma 65--v v gs(th) gate-source threshold voltage v ds =10 v; i d =72ma 1.5 1.9 2.3 v v gsq gate-source quiescent voltage v ds =28 v; i d = 432 ma 1.7 2.0 2.5 v i dss drain leakage current v gs =0v; v ds =28v - - 1.4 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -13.4- a i gss gate leakage current v gs =11v; v ds = 0 v - - 140 na g fs forward transconductance v ds =10v; i d = 72 ma - 0.62 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =2.52a - 210 323 m ? table 7. rf characteristics test signal: 1-carrier w-cdma; par = 7.2 db at 0.01 % probability on the ccdf; 3gpp test model 1; 1 to 64 dpch; f 1 = 2496 mhz; f 2 = 2690 mhz; rf performance at v ds =28v; i dq = 250 ma (main); v gs(amp)peak = 0.8 v; t case =25 ? c; unless otherwise specified; in an asymmetrical doherty production test circuit at 2496 mhz to 2690 mhz. symbol parameter conditions min typ max unit g p power gain p l(av) = 17.8 w 14.3 15.5 - db rl in input return loss p l(av) = 17.8 w - ? 10 ? 6db ? d drain efficiency p l(av) = 17.8 w 39 44 - % acpr adjacent channel power ratio p l(av) = 17.8 w - ? 31 ? 25 dbc table 8. rf characteristics test signal: 1-carrier w-cdma; par = 7.2 db at 0.01 % probability on the ccdf; 3gpp test model 1; 1 to 64 dpch; f = 2690 mhz; rf performance at v ds = 28 v; i dq = 250 ma (main); v gs(amp)peak = 0.8 v; t case = 25 ? c; unless otherwise specified; in an asymmetrical doherty production test circuit at 2496 mhz to 2690 mhz. symbol parameter conditions min typ max unit par o output peak-to-average ratio p l(av) = 50 w 3.6 4.2 - db p l(m) peak output power 112 133 - w
blc8g27ls-100av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 29 september 2014 4 of 14 nxp semiconductors blc8g27ls-100av power ldmos transistor 7. test information 7.1 ruggedness in doherty operation the blc8g27ls-100av is capable of withstanding a load mismatch corresponding to a vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 250 ma (main); v gs(amp)peak =0.8v; p l = 70 w (cw); f = 2496 mhz. 7.2 impedance information [1] z s and z l defined in figure 1 . [2] at 3 db gain compression. [1] z s and z l defined in figure 1 . [2] at 3 db gain compression. table 9. typical impedance of main device measured load-pull data of main device; i dq = 300 ma (main); v ds = 28 v. f z s [1] z l [1] p l [2] ? d [2] g p [2] (mhz) (? ) (? ) (w) (%) (db) maximum power load 2496 2.5 ? j6.7 4.0 ? j7.6 63 56.0 16.0 2600 3.4 ? j7.0 4.0 ? j7.6 61 55.6 16.7 2690 3.2 ? j6.2 4.0 ? j7.6 60 56.1 17.1 maximum drain efficiency load 2496 2.5 ? j6.7 7.1 ? j5.1 47.9 64 18.2 2600 3.4 ? j7.0 6.5 ? j4.6 44.3 63 19.0 2690 3.2 ? j6.2 6.0 ? j4.1 40.5 62 19.5 table 10. typical impedance of peak device measured load-pull data of peak device; i dq = 400 ma (main); v ds = 28 v. f z s [1] z l [1] p l [2] ? d [2] g p [2] (mhz) (? ) (? ) (w) (%) (db) maximum power load 2496 2.6 ? j6.4 2.7 ? j7.1 83 55.7 17.8 2600 3.2 ? j6.9 2.1 ? j7.1 82 51.4 17.7 2690 4.3 ? j7.8 2.1 ? j7.1 82 53.2 18.4 maximum drain efficiency load 2496 2.6 ? j6.4 4.0 ? j5.6 61 66.6 19.7 2600 3.2 ? j6.9 3.7 ? j5.1 62 60.8 20.1 2690 4.3 ? j7.8 3.3 ? j5.4 61 60.5 20.6
blc8g27ls-100av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 29 september 2014 5 of 14 nxp semiconductors blc8g27ls-100av power ldmos transistor 7.3 recommended impedances for doherty design [1] z s and z l defined in figure 1 . [2] at 3 db gain compression. [3] at p l(av) = 42.5 dbm. [1] z s and z l defined in figure 1 . [2] at 3 db gain compression. [3] at p l(av) = 42.5 dbm. 7.4 vbw in doherty operation the blc8g27ls-100av shows 130 mhz (typical) video bandwidth in doherty demo board in 2600 mhz at v ds =28v; i dq = 250 ma and v gs(amp)peak =0.8v. fig 1. definition of transistor impedance ddi gudlq = / = 6 jdwh table 11. typical impedance of main device at 1 : 1 load measured load-pull data of main device; i dq = 300 ma (main); v ds = 28 v. f z s [1] z l [1] p l [2] ? d [3] g p [3] (mhz) (? ) (? ) (dbm) (%) (db) 2496 2.5 ? j6.7 5.1 ? j6.5 59 36.8 20.0 2600 3.4 ? j7.0 5.1 ? j6.5 56 38.0 20.5 2690 3.2 ? j6.2 5.1 ? j6.5 56 39.2 21.2 table 12. typical impedance of main device at 1 : 2.5 load measured load-pull data of main device; i dq = 300 ma (main); v ds = 28 v. f z s [1] z l [1] p l [2] ? d [3] g p [3] (mhz) (? ) (? ) (dbm) (%) (db) 2496 2.5 ? j6.7 11.2 ? j2.7 31 52.0 22.2 2600 3.4 ? j7.0 10.0 ? j2.3 30 51.1 22.5 2690 3.2 ? j6.2 7.5 ? j0.8 25 52.2 22.1
blc8g27ls-100av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 29 september 2014 6 of 14 nxp semiconductors blc8g27ls-100av power ldmos transistor 7.5 test circuit [1] american technical ce ramics type 600f or capacitor of same quality [2] murata or capacitor of same quality printed-circuit board (pcb): rogers ro4350b; ? r = 3.5; thickness = 0.508 mm; thickness copper plating = 35 ? m. see table 13 for a list of components. fig 2. component layout table 13. list of components see figure 2 for component layout. component description value remarks c1, c2, c3, c4, c10, c11, c12 multilayer ceramic chip capacitor 11 pf [1] atc 600f c9 multilayer ceramic chip capacitor 5.1 pf [1] atc 600f c6, c8, c13, c15 multilayer ceramic chip capacitor 1 ? f, 5 0 v [2] murata c5, c7, c14, c16 multilayer ceramic chip capacitor 10 ? f, 5 0 v [2] murata c17, c18 electrolytic capacitor 470 ? f, 5 0 v r1, r2 smd resistor 9.1 ? smd 0805 r3 smd resistor 50 ? smd 0805 ddd pp pp pp & 5 5 & & & & & 5 & & & & & & & & & & & &
blc8g27ls-100av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 29 september 2014 7 of 14 nxp semiconductors blc8g27ls-100av power ldmos transistor 7.6 graphical data 7.6.1 cw 7.6.2 pulsed cw v ds =28v; i dq = 250 ma (main device); v gs(amp)peak =0.8v. (1) f = 2496 mhz (2) f = 2690 mhz fig 3. power gain and drain efficiency as function of output power; typical values ddd 3 / g%p * s * s g% g% g% ' ' * s * s ' ' v ds =28v; i dq = 250 ma (main device); v gs(amp)peak =0.8v. (1) f = 2496 mhz (2) f = 2690 mhz v ds =28v; i dq = 250 ma (main device); v gs(amp)peak =0.8v. (1) f = 2496 mhz (2) f = 2690 mhz fig 4. power gain and drain efficiency as function of output power; typical values fig 5. input return loss as a function of output power; typical values ddd 3 / g%p * s * s g% g% g% ' ' * s * s ' ' ddd 3 / g%p 5/ 5/ lq lq 5/ lq g% g% g%
blc8g27ls-100av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 29 september 2014 8 of 14 nxp semiconductors blc8g27ls-100av power ldmos transistor 7.6.3 1-carrier w-cdma v ds =28v; i dq = 250 ma (main device); v gs(amp)peak =0.8v. (1) f = 2496 mhz (2) f = 2690 mhz v ds =28v; i dq = 250 ma (main device); v gs(amp)peak =0.8v. (1) f = 2496 mhz (2) f = 2690 mhz fig 6. power gain and drain efficiency as function of output power; typical values fig 7. peak-to-average power ratio as a function of output power; typical values v ds =28v; i dq = 250 ma (main device); v gs(amp)peak =0.8v. (1) f = 2496 mhz (2) f = 2690 mhz v ds =28v; i dq = 250 ma (main device); v gs(amp)peak =0.8v. (1) f = 2496 mhz (2) f = 2690 mhz fig 8. input return loss as a function of output power; typical values fig 9. adjacent channel power ratio (5 mhz) as a function of output power; typical values ddd 3 / g%p * s * s g% g% g% ' ' ddd 3 / g%p 3$5 3$5 3$5 g% g% g% ddd 3 / g%p 5/ 5/ lq lq 5/ lq g% g% g% ddd 3 / g%p $&35 $&35 0 0 $&35 0 g%f g%f g%f
blc8g27ls-100av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 29 september 2014 9 of 14 nxp semiconductors blc8g27ls-100av power ldmos transistor 7.6.4 2-tone vbw v ds = 28 v; i dq = 250 ma (main device); f c = 2600 mhz. (1) imd low (2) imd high fig 10. vbw capability in doherty demo board ddd fduulhuvsdflqj0+] ,0' ,0' ,0' g%f g%f g%f ,0' ,0' ,0' ,0' ,0' ,0' ,0' ,0' ,0'
blc8g27ls-100av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 29 september 2014 10 of 14 nxp semiconductors blc8g27ls-100av power ldmos transistor 8. package outline fig 11. package outline sot1275-1 5hihuhqfhv 2xwolqh yhuvlrq (xurshdq surmhfwlrq ,vvxhgdwh ,(& -('(& -(,7$ 627 vrwbsr 8qlw pp pd[ qrp plq $ 'lphqvlrqvppglphqvlrqvduhghulyhgiurpwkhruljlqdolqfkglphqvlrqv $lufdylw\sodvwlfhduohvviodqjhgsdfndjhohdgv 627 ee f'' (( h)++ /4 8 8 ? = = . . ? z y z pp vfdoh % $ h ' + e 4 8 e 8 / ' ) = = ( ( + $ f z % z % y $
blc8g27ls-100av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 29 september 2014 11 of 14 nxp semiconductors blc8g27ls-100av power ldmos transistor 9. handling information 10. abbreviations 11. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 14. abbreviations acronym description 3gpp 3rd generation partnership project ccdf complementary cumulative distribution function cw continuous wave dpch dedicated physical channel esd electrostatic discharge ldmos laterally diffused metal-oxide semiconductor lte long term evolution mtf median time to failure par peak-to-average ratio smd surface mounted device vbw video bandwidth vswr voltage standing wave ratio w-cdma wideband code division multiple access table 15. revision history document id release date data sheet status change notice supersedes blc8g27ls-100av v.2 20140929 product data sheet - blc8g27ls-100av v.1 modifications: ? section 1.1 on page 1 : the frequency range has been changed. ? table 1 on page 1 : value p l(av) changed from 17 w to 18 w ? section 1.3 on page 1 : the frequency range has been changed. ? table 5 on page 2 : table updated ? section 6 on page 3 : section updated ? section 7 on page 4 : section added blc8g27ls-100av v.1 20140225 objective data sheet - -
blc8g27ls-100av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 29 september 2014 12 of 14 nxp semiconductors blc8g27ls-100av power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? 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applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? 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blc8g27ls-100av all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all ri ghts reserved. product data sheet rev. 2 ? 29 september 2014 13 of 14 nxp semiconductors blc8g27ls-100av power ldmos transistor export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors blc8g27ls-100av power ldmos transistor ? nxp semiconductors n.v. 2014. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 29 september 2014 document identifier: blc8g27ls-100av please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.1 ruggedness in doherty operation . . . . . . . . . . 4 7.2 impedance information . . . . . . . . . . . . . . . . . . . 4 7.3 recommended impedances for doherty design 5 7.4 vbw in doherty operation . . . . . . . . . . . . . . . . 5 7.5 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.6 graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7 7.6.1 cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 7.6.2 pulsed cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 7.6.3 1-carrier w-cdma . . . . . . . . . . . . . . . . . . . . . . 8 7.6.4 2-tone vbw . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 9 handling information. . . . . . . . . . . . . . . . . . . . 11 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 12 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 contact information. . . . . . . . . . . . . . . . . . . . . 13 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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